Comments on "Monte Carlo simulation of transport in technologically significant semiconductors of the diamond and zinc-blende structures. II. Submicrometer MOSFETs" [with reply]

Author

Fulkerson, David E ; Fischetti, M.V. ; Laux, S.E.

Author_Institution

Honeywell Syst. & Res. Center, Bloomington, MN, USA

Volume

39

Issue

3

fYear

1992

fDate

3/1/1992 12:00:00 AM

Firstpage

749

Lastpage

750

Abstract

For the original article see ibid., vol.38, no.3, p.650-60 (1991). Using transistor transconductance as a measure of speed, M.V. Fischetti and S.E. Laux, the authors of the above-titled paper, conclude that GaAs technology does not offer any significant speed advantage over Si. However, the commenter points out that their contention is contradicted by the data in their paper which show that GaAs MESFETs have transconductance about twice that of Si MOSFETs for the short gate lengths considered. The use of transconductance rather than f/sub t/ as a measure for speed is also questioned. The authors defend their results.<>

Keywords

Monte Carlo methods; insulated gate field effect transistors; semiconductor device models; GaAs; MESFETs; Monte Carlo simulation; Si; device speed; diamond; semiconductors; short gate lengths; submicron MOSFET; transistor transconductance; transport process simulation; zinc-blende structures; CMOS logic circuits; Capacitance; Delay; Gallium arsenide; Logic gates; MESFETs; MOSFETs; Paper technology; Transconductance; Velocity measurement;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.123508

Filename

123508