Pseudo-MOSFET Substrate Effects of Drain Current Hysteresis and Transient Behavior

A large drain current-gate voltage hysteresis of evaporated metal contact pseudo-MOSFETs ( Psi-MOSFET) is reported. The Psi-MOSFET drain current exhibits a hysteresis when the gate voltage is swept from negative to positive and from positive to negative voltages. Optical illumination, elevated temperatures, and decreased sweep rate during the measurements eliminate this phenomenon. The reason for this behavior is related to electron-hole pair generation in the substrate. In this paper, we report systematic studies and device simulations to document and understand these substrate effects during Psi-MOSFET measurements.