DocumentCode
799031
Title
Comments on "A self-backgating GaAs MESFET model for low-frequency anomalies
Author
Reynoso-Harnandez, J.A.
Author_Institution
Centro de Investigacion Cientifica y de Educ. Superior de Ensenada, Mexico
Volume
39
Issue
3
fYear
1992
fDate
3/1/1992 12:00:00 AM
Firstpage
750
Abstract
For the original article see ibid., vol.37, no.10, p.2148-57 (1990). The commenter maintains that some basic equations of the model in the above-titled paper by M. Lee and L. Forbes are questionable. Particularly, the development of the equations for calculating the small-signal output conductance is questioned.<>
Keywords
III-V semiconductors; Schottky gate field effect transistors; gallium arsenide; semiconductor device models; GaAs; MESFET model; low-frequency anomalies; self-backgating; small-signal output conductance; Differential equations; Electrical resistance measurement; Electron devices; Equivalent circuits; Frequency dependence; Gallium arsenide; MESFET circuits; MOSFET circuits; Solid modeling; Solid state circuits;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/16.123509
Filename
123509
Link To Document