Title :
Comments on "A self-backgating GaAs MESFET model for low-frequency anomalies
Author :
Reynoso-Harnandez, J.A.
Author_Institution :
Centro de Investigacion Cientifica y de Educ. Superior de Ensenada, Mexico
fDate :
3/1/1992 12:00:00 AM
Abstract :
For the original article see ibid., vol.37, no.10, p.2148-57 (1990). The commenter maintains that some basic equations of the model in the above-titled paper by M. Lee and L. Forbes are questionable. Particularly, the development of the equations for calculating the small-signal output conductance is questioned.<>
Keywords :
III-V semiconductors; Schottky gate field effect transistors; gallium arsenide; semiconductor device models; GaAs; MESFET model; low-frequency anomalies; self-backgating; small-signal output conductance; Differential equations; Electrical resistance measurement; Electron devices; Equivalent circuits; Frequency dependence; Gallium arsenide; MESFET circuits; MOSFET circuits; Solid modeling; Solid state circuits;
Journal_Title :
Electron Devices, IEEE Transactions on
