DocumentCode :
799160
Title :
Permeability of Fe-Si Films with Preferred Crystallographic Orientation
Author :
Hosono, A. ; Shimada, Y.
Author_Institution :
Tohoku University.
Volume :
6
Issue :
11
fYear :
1991
Firstpage :
953
Lastpage :
959
Abstract :
The initial permeability of Fe-Si polycrystalline thin films was investigated. Based on calculations of the magneto-crystalline anisotropy and initial permeability which assume that the magnetization is confined to a certain crystal plane, Fe-Si polycrystalline thin films oriented with the (111) plane parallel to the film plane are ´ expected to have a high permeability of about 5000. Fe-6.9 wt% Si films were deposited on three kinds of underlayer with three different crystal orientations. The initial permeability of Fe-Si films on ZnSe underlayers with (111) orientation is about 1700, which is higher than that of films with a (100) or (110) orientation.
Keywords :
Anisotropic magnetoresistance; Crystallography; Magnetic anisotropy; Magnetic confinement; Magnetization; Permeability; Perpendicular magnetic anisotropy; Semiconductor films; Transistors; Zinc compounds;
fLanguage :
English
Journal_Title :
Magnetics in Japan, IEEE Translation Journal on
Publisher :
ieee
ISSN :
0882-4959
Type :
jour
DOI :
10.1109/TJMJ.1991.4565287
Filename :
4565287
Link To Document :
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