Growth of CuO Nanowires by Thermal Oxidation on Glass Substrate With Graphene as the Electrode

Author

Han-Ting Hsueh ; Tsung-Chieh Cheng ; Chung-Lin Wu ; Chen-Wei Wu

Author_Institution

Nat. Nano Devices Labs., Nat. Appl. Res. Labs., Tainan, Taiwan

Volume

34

Issue

10

fYear

2013

fDate

Oct. 2013

Firstpage

1316

Lastpage

1318

Abstract

The authors report the growth of CuO nanowires (NWs) by thermal oxidation of copper film that was deposited on CuO/graphene/glass substrate. Monolayer graphene performs good adhesion after growing CuO NWs at 450 °C in air, and the morphology of CuO NWs were uniformly distributed on the sample. The field emission properties of these CuO NWs were also discussed that monolayer graphene was used as the emitter´s electrode. The turn-on fields of CuO NWs were 16.7, 11.69, and 8.74 V/μm, and the NWs lengths were 0.3, 3.3, and 5.8 μm, respectively.

Keywords

adhesion; copper; copper compounds; crystal morphology; electrochemical electrodes; field emission; graphene; monolayers; nanowires; narrow band gap semiconductors; oxidation; semiconductor growth; C; Cu; CuO; CuO nanowires growth; CuO-graphene-glass substrate; adhesion; copper film; emitter electrode; field emission properties; monolayer graphene; morphology; temperature 450 degC; thermal oxidation; Copper; Electrodes; Glass; Graphene; Nanowires; Silicon; Substrates; CuO; graphene; nanowires (NWs);

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/LED.2013.2275907

Filename

6578063