Title :
Contact-Length-Dependent Contact Resistance of Top-Gate Staggered Organic Thin-Film Transistors
Author :
Wang, Hong ; Li, Ling ; Ji, Zhuoyu ; Lu, Congyan ; Guo, Jingwei ; Wang, Long ; Liu, Ming
Author_Institution :
Lab. of Nano-Fabrication & Novel Devices Integrated Technol., Inst. of Microelectron., Beijing, China
Abstract :
In this letter, a contact-length-dependent contact resistance model for top-gate staggered organic thin-film transistors (OTFTs) is proposed. The presented model can well describe the contact resistance increase as the distance by which the gate electrode overlaps the source and drain contact (contact length) decrease. Based on the contact resistance model, the contact-length-dependent cutoff frequency of OTFTs is described, and an optimized contact length can be obtained for high-frequency OTFT applications.
Keywords :
contact resistance; organic field effect transistors; thin film transistors; OTFT; contact length dependent contact resistance; drain contact; gate electrode; source contact; top gate staggered organic thin film transistors; Contact resistance; Cutoff frequency; Logic gates; Organic thin film transistors; Resistance; Contact length; contact resistance; cutoff frequency; organic thin-film transistor (OTFT);
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/LED.2012.2224631
