Title :
Electrical Characteristics of Hybrid Nanoparticle–Nanowire Devices
Author :
Jeong, Dong-Young ; Keem, Kihyun ; Park, Byoungjun ; Cho, Kyoungah ; Kim, Sangsig
Author_Institution :
Dept. of Electr. Eng., Korea Univ., Seoul, South Korea
Abstract :
Gold nanoparticles synthesized by a colloidal method were deposited in an Al2O3 dielectric layer of an omega-gated single ZnO nanowire FET. These gold nanoparticles were utilized as localized trap sites. The adsorption of the gold nanoparticles on an Al2O3-coated ZnO nanowire was confirmed by high-resolution transmission electron microscopy. In this study, a hybrid nanoparticle-nanowire device was fabricated by conventional Si processing. Its electrical characteristics indicated that electrons in the conduction band of the ZnO nanowire can be transported to the localized trap sites by gold nanoparticles for gate voltages greater than 1 V, through the 10-nm-thick Al 2O3 tunneling oxide layer.
Keywords :
II-VI semiconductors; adsorption; aluminium compounds; colloids; conduction bands; electrical conductivity; field effect transistors; gold; localised states; nanoparticles; nanowires; transmission electron microscopy; tunnelling; zinc compounds; Al2O3-Au-ZnO; adsorption; colloidal method; conduction band; dielectric layer; gold nanoparticles; high-resolution transmission electron microscopy; hybrid nanoparticle-nanowire device; hybrid nanoparticle-nanowire devices; localized trap sites; omega-gated single nanowire FET; size 10 nm; tunneling oxide layer; FET logic devices; FET memory integrated circuits; memories; nanotechnology;
Journal_Title :
Nanotechnology, IEEE Transactions on
DOI :
10.1109/TNANO.2009.2021995
