DocumentCode
799705
Title
Proton-exchanged wet etching of recessed-structure SAW filter
Author
Tsai, Shih-Hung ; Wang, Na-Fh ; Houng, Mau-Phon ; Wang, Yeong-Her
Author_Institution
Dept. of Electr. Eng., Nat. Cheng Kung Univ., Tainan, Taiwan
Volume
50
Issue
9
fYear
2003
Firstpage
1219
Lastpage
1222
Abstract
An improved method for fabricating recessed-structure surface acoustic wave (SAW) filters is reported. The relation between proton-exchanged duration and etched depth are studied, as well as the relation between internal reflection, etched depth, and thickness of the aluminum electrode. Experimental results show that the devices have superior performance, and ideas for further improvement of the fabricated SAW device are discussed.
Keywords
aluminium; electrodes; etching; ion exchange; lithium compounds; surface acoustic wave filters; Al; Al electrode thickness; LiNbO/sub 3/; etched depth; internal reflection; proton-exchanged duration; proton-exchanged wet etching; recessed-structure SAW filter; surface acoustic wave filter fabrication; Chromium; Dry etching; Fabrication; Protons; SAW filters; Sputter etching; Substrates; Surface acoustic wave devices; Surface acoustic waves; Wet etching;
fLanguage
English
Journal_Title
Ultrasonics, Ferroelectrics, and Frequency Control, IEEE Transactions on
Publisher
ieee
ISSN
0885-3010
Type
jour
DOI
10.1109/TUFFC.2003.1235335
Filename
1235335
Link To Document