Title :
Enhanced P3HT OTFT Transport Performance Using Double Gate Modulation Scheme
Author :
Lo, Po-Yuan ; Li, Pei-Wen ; Pei, Zing-Way ; Hou, Jack ; Chan, Yi-Jen
Author_Institution :
Electron. & Optoelectron. Res. Labs., Ind. Technol. Res. Inst., Hsinchu
fDate :
6/1/2009 12:00:00 AM
Abstract :
Electrical properties of single-gated (bottom-gated or top-gated) and double-gated (DG) organic thin-film transistors (OTFTs) are systematically investigated in terms of threshold voltage (V th), subthreshold slope, and I ON/OFF. We found that the device structure has significant impacts on the aforementioned electrical properties and the operation modes in a poly-3-hexyl thiophene DG OTFT. An empirical electrostatic potential model is employed to describe well V th behaviors of DG OTFTs in different modulation schemes. In addition, selective active-area coating in OTFTs is realized using an inkjet printing process, and consequently, parasitic leakage is much suppressed.
Keywords :
electrostatics; organic semiconductors; thin film transistors; device structure; double gate modulation; double-gated organic thin-film transistor; electrical properties; electrostatic potential model; enhanced P3HT OTFT transport performance; poly-3-hexyl thiophene DG OTFT; single-gated organic thin-film transistor; subthreshold slope; threshold voltage; Double gate; operation mode; organic thin-film transistor (OTFT);
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/LED.2009.2018707
