Enhanced P3HT OTFT Transport Performance Using Double Gate Modulation Scheme

Author

Lo, Po-Yuan ; Li, Pei-Wen ; Pei, Zing-Way ; Hou, Jack ; Chan, Yi-Jen

Author_Institution

Electron. & Optoelectron. Res. Labs., Ind. Technol. Res. Inst., Hsinchu

Volume

30

Issue

6

fYear

2009

fDate

6/1/2009 12:00:00 AM

Firstpage

629

Lastpage

631

Abstract

Electrical properties of single-gated (bottom-gated or top-gated) and double-gated (DG) organic thin-film transistors (OTFTs) are systematically investigated in terms of threshold voltage (V _th), subthreshold slope, and I _ON/OFF. We found that the device structure has significant impacts on the aforementioned electrical properties and the operation modes in a poly-3-hexyl thiophene DG OTFT. An empirical electrostatic potential model is employed to describe well V _th behaviors of DG OTFTs in different modulation schemes. In addition, selective active-area coating in OTFTs is realized using an inkjet printing process, and consequently, parasitic leakage is much suppressed.

Keywords

electrostatics; organic semiconductors; thin film transistors; device structure; double gate modulation; double-gated organic thin-film transistor; electrical properties; electrostatic potential model; enhanced P3HT OTFT transport performance; poly-3-hexyl thiophene DG OTFT; single-gated organic thin-film transistor; subthreshold slope; threshold voltage; Double gate; operation mode; organic thin-film transistor (OTFT);

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/LED.2009.2018707

Filename

4907105