Title :
Demodulation Pixel Based on Static Drift Fields
Author :
Büttgen, Bernhard ; Lustenberger, Felix ; Seitz, Peter
Author_Institution :
Centre Suisse d´´Electronique et de Microtechnique, Zurich
Abstract :
A novel pixel architecture for two-dimensional pixel parallel demodulation of modulated light waves is introduced, enabling real-time three-dimensional (3-D) imaging. Applications for such methods can be found in the field of surveillance, robotics, automotive, and industry security applications. The pixel architecture is based on large areas of static drift fields and relatively small demodulation regions. The large area of static drift field forms the basic photodetection region. The constant drift field enables the very fast transport of photo-generated charges to the sampling region where demodulation of the light signal is performed. The main advantages compared to recently used demodulation pixels are lower power consumption and higher optical fill factor or sensitivity. The first implementation is a pixel of 40times40 mum 2 size with 25% optical fill factor. Measurements prove the concept of transporting photo-generated charges within less than 1 ns to the demodulation node. The applicability of the pixel in 3-D imaging applications is highlighted by distance measurements achieving millimeter distance resolution
Keywords :
CCD image sensors; CMOS image sensors; distance measurement; low-power electronics; optical modulation; photodetectors; 3D imaging; charge transfer devices; demodulation pixel; distance measurements; modulated light waves; optical fill factor; parallel demodulation; photodetection region; photogenerated charges; power consumption; smart pixels; static drift fields; Automotive engineering; Demodulation; Optical imaging; Optical modulation; Optical sensors; Pixel; Sampling methods; Security; Service robots; Surveillance; Charge transfer devices; demodulation; demodulation pixel; distance measurement; electric field; smart pixels; three-dimensional (3-D) imaging; time-of-flight (TOF);
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/TED.2006.883669