• DocumentCode
    800041
  • Title

    Influence of the ground line position on the signal integrity of product-related interconnects in the frequency and time domain

  • Author

    Ktata, M. Faïez ; Arz, Uwe ; Grabinski, Hartmut ; Fischer, Helmut

  • Author_Institution
    Memory Products Div., Infineon Technol. AG, Munich, Germany
  • Volume
    28
  • Issue
    2
  • fYear
    2005
  • fDate
    5/1/2005 12:00:00 AM
  • Firstpage
    152
  • Lastpage
    159
  • Abstract
    The impact of the ground line position on the line parameters of signal interconnects built in a 110-nm CMOS technology is investigated in the presence of a conductive substrate. Characteristic line parameters obtained from simulations are validated with two-port network analyzer measurements of specially designed test structures in a frequency range up to 50 GHz. In addition, the influence of the ground line position on time-domain signals in product-related bus systems is explored. It is shown that the impact of substrate effects on the line parameters, and consequently on the signal shape in the time domain, strongly depends on the relative position of the ground line with respect to the signal lines and, as expected, on the length of the line system. The authors show that for short on-chip bus systems (shorter than 2 mm), the influence of the ground line positioning on time-domain signals is negligible. However, for long bus systems (e.g., 5 mm), this influence becomes significant and can no longer be neglected.
  • Keywords
    CMOS integrated circuits; circuit simulation; frequency-domain analysis; integrated circuit interconnections; integrated circuit packaging; integrated circuit testing; millimetre wave measurement; time-domain analysis; 110 nm; 110-nm CMOS technology; bus systems; frequency domain; ground line position; interconnects; line parameters; parameter extraction; proximity effect; signal integrity; substrate effects; time domain; two port network analyzer; Analytical models; CMOS technology; Chip scale packaging; Frequency measurement; Geometry; Proximity effect; Scattering parameters; Shape; Testing; Time domain analysis; 110-nm CMOS technology; Parameter extraction; S-parameter measurement; proximity effect; signal integrity; substrate effects; time-domain simulations;
  • fLanguage
    English
  • Journal_Title
    Advanced Packaging, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    1521-3323
  • Type

    jour

  • DOI
    10.1109/TADVP.2005.846946
  • Filename
    1427838