Observation of stimulated emission, line narrowing, and red shift of emission peak from optically-pumped rectangular cross-sectional GaN optical waveguides fabricated by selective growth

Author

Tanaka, T. ; Uchida, K. ; Watanabe, A. ; Minagawa, S.

Author_Institution

Central Res. Lab., Hitachi Ltd., Tokyo, Japan

Volume

32

Issue

1

fYear

1996

fDate

1/4/1996 12:00:00 AM

Firstpage

34

Lastpage

36

Abstract

The authors examined low-loss III-V nitride optical waveguides for fabrication on sapphire substrates for active devices using a selective-area growth technique. A rectangular cross-section waveguide can be created by adjusting crystal growth conditions. A stimulated emission peak at 362 nm, line narrowing, and a red shift were observed from the selectively grown GaN waveguides by optical pumping

Keywords

III-V semiconductors; gallium compounds; optical pumping; optical waveguides; photoluminescence; rectangular waveguides; red shift; semiconductor epitaxial layers; semiconductor growth; semiconductor lasers; spectral line narrowing; stimulated emission; vapour phase epitaxial growth; waveguide lasers; 362 nm; GaN; MOVPE; crystal growth conditions; emission peak; line narrowing; low-loss optical waveguides; luminescent devices; optically-pumped rectangular cross-sectional optical waveguides; photoluminescence; red shift; sapphire substrates; selective-area growth technique; stimulated emission;

fLanguage

English

Journal_Title

Electronics Letters

Publisher

iet

ISSN

0013-5194

Type

jour

DOI

10.1049/el:19960005

Filename

490713