DocumentCode :
800078
Title :
Observation of stimulated emission, line narrowing, and red shift of emission peak from optically-pumped rectangular cross-sectional GaN optical waveguides fabricated by selective growth
Author :
Tanaka, T. ; Uchida, K. ; Watanabe, A. ; Minagawa, S.
Author_Institution :
Central Res. Lab., Hitachi Ltd., Tokyo, Japan
Volume :
32
Issue :
1
fYear :
1996
fDate :
1/4/1996 12:00:00 AM
Firstpage :
34
Lastpage :
36
Abstract :
The authors examined low-loss III-V nitride optical waveguides for fabrication on sapphire substrates for active devices using a selective-area growth technique. A rectangular cross-section waveguide can be created by adjusting crystal growth conditions. A stimulated emission peak at 362 nm, line narrowing, and a red shift were observed from the selectively grown GaN waveguides by optical pumping
Keywords :
III-V semiconductors; gallium compounds; optical pumping; optical waveguides; photoluminescence; rectangular waveguides; red shift; semiconductor epitaxial layers; semiconductor growth; semiconductor lasers; spectral line narrowing; stimulated emission; vapour phase epitaxial growth; waveguide lasers; 362 nm; GaN; MOVPE; crystal growth conditions; emission peak; line narrowing; low-loss optical waveguides; luminescent devices; optically-pumped rectangular cross-sectional optical waveguides; photoluminescence; red shift; sapphire substrates; selective-area growth technique; stimulated emission;
fLanguage :
English
Journal_Title :
Electronics Letters
Publisher :
iet
ISSN :
0013-5194
Type :
jour
DOI :
10.1049/el:19960005
Filename :
490713
Link To Document :
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