Title :
Velocity Enhancement in Cryogenically Cooled InP-Based HEMTs on (411)A-Oriented Substrates
Author :
Watanabe, Issei ; Shinohara, K. ; Kitada, T. ; Shimomura, Shoji ; Yamashita, Yukihiko ; Endoh, Akira ; Mimura, Takashi ; Hiyamizu, S. ; Matsui, Takashi
Author_Institution :
Nat. Inst. of Inf. & Commun. Technol., Tokyo
Abstract :
An extremely high maximum transconductance gmmax of 2.25 S/mm and a cutoff frequency fT of 310 GHz was achieved at a cryogenic temperature (16 K) in a 195-nm-gate In0.75Ga 0.25As/In0.52Al0.48As high electron mobility transistor (HEMT) fabricated on a (411)A-oriented InP substrate by molecular beam epitaxy, compared with room temperature values (gmmax=1.78 S/mm and fT=245 GHz). These significantly enhanced gmmax and fT values are attributed to a high electron velocity of up to 4.9times107 cm/s due to suppressing phonon scattering in the In0.75Ga0.25As/In0.52Al0.48 As HEMT with (411) A super-flat InGaAs/InAlAs interfaces (effectively atomically flat heterointerfaces over a wafer-size area)
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; high electron mobility transistors; indium compounds; 16 K; 195 nm; 310 GHz; HEMT; InGaAs-InAlAs; cryogenic temperature; cutoff frequency; high electron mobility transistor; high electron velocity; molecular beam epitaxy; phonon scattering; velocity enhancement; Cryogenics; Cutoff frequency; Electrons; HEMTs; Indium phosphide; MODFETs; Molecular beam epitaxial growth; Substrates; Temperature; Transconductance; (411)A super-flat interfaces; Average electron velocity; InGaAs/InAlAs; InP; cutoff frequency; high-electron mobility transistor (HEMT); transconductance;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/TED.2006.884065
