Velocity Enhancement in Cryogenically Cooled InP-Based HEMTs on (411)A-Oriented Substrates

Author

Watanabe, Issei ; Shinohara, K. ; Kitada, T. ; Shimomura, Shoji ; Yamashita, Yukihiko ; Endoh, Akira ; Mimura, Takashi ; Hiyamizu, S. ; Matsui, Takashi

Author_Institution

Nat. Inst. of Inf. & Commun. Technol., Tokyo

Volume

53

Issue

11

fYear

2006

Firstpage

2842

Lastpage

2846

Abstract

An extremely high maximum transconductance g_mmax of 2.25 S/mm and a cutoff frequency f_T of 310 GHz was achieved at a cryogenic temperature (16 K) in a 195-nm-gate In_0.75Ga _0.25As/In_0.52Al_0.48As high electron mobility transistor (HEMT) fabricated on a (411)A-oriented InP substrate by molecular beam epitaxy, compared with room temperature values (g_mmax=1.78 S/mm and f_T=245 GHz). These significantly enhanced g_mmax and f_T values are attributed to a high electron velocity of up to 4.9times10⁷ cm/s due to suppressing phonon scattering in the In_0.75Ga_0.25As/In_0.52Al_0.48As HEMT with (411) A super-flat InGaAs/InAlAs interfaces (effectively atomically flat heterointerfaces over a wafer-size area)

Keywords

III-V semiconductors; aluminium compounds; gallium arsenide; high electron mobility transistors; indium compounds; 16 K; 195 nm; 310 GHz; HEMT; InGaAs-InAlAs; cryogenic temperature; cutoff frequency; high electron mobility transistor; high electron velocity; molecular beam epitaxy; phonon scattering; velocity enhancement; Cryogenics; Cutoff frequency; Electrons; HEMTs; Indium phosphide; MODFETs; Molecular beam epitaxial growth; Substrates; Temperature; Transconductance; (411)A super-flat interfaces; Average electron velocity; InGaAs/InAlAs; InP; cutoff frequency; high-electron mobility transistor (HEMT); transconductance;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/TED.2006.884065

Filename

1715632