DocumentCode :
80019
Title :
Improved 1.3- 
Electroluminescence of InGaAs-Capped Type-II GaSb/GaAs Quantum Rings at Room Temperature
Author :
Lin, Wei-Hsun ; Wang, Kai-Wei ; Lin, Shih-Yen ; Wu, Meng-Chyi
Author_Institution :
Inst. of Electron. Eng., Nat. Tsing Hua Univ., Hsinchu, Taiwan
Volume :
25
Issue :
1
fYear :
2013
fDate :
Jan.1, 2013
Firstpage :
97
Lastpage :
99
Abstract :
Room-temperature 1.3-μm electroluminescence is observed for the InGaAs-capped GaSb quantum rings (QRs). The increasing carrier density in the InGaAs-capped type-II GaSb QRs would induce a larger blue shift in the same laser pumping power span and enhance the luminescence intensity. The enhanced luminescence intensity, a larger blue shift of peak wavelength, and 1.3-μm emission of the InGaAs-capped QR structure have revealed its potential application in multi-wavelength light-emitting devices in the near infrared range.
Keywords :
III-V semiconductors; carrier density; electroluminescence; gallium arsenide; indium compounds; semiconductor quantum dots; spectral line shift; InGaAs-GaSb-GaAs; blue shift; capped type quantum rings; carrier density; electroluminescence; laser pumping power span; luminescence intensity; temperature 293 K to 298 K; wavelength 1.3 mum; Gallium arsenide; Indium gallium arsenide; Laser excitation; Luminescence; Power lasers; Pump lasers; Quantum dots; GaSb quantum rings; light-emitting devices;
fLanguage :
English
Journal_Title :
Photonics Technology Letters, IEEE
Publisher :
ieee
ISSN :
1041-1135
Type :
jour
DOI :
10.1109/LPT.2012.2229700
Filename :
6365232
Link To Document :
