DocumentCode :
800266
Title :
Coupling between microstrip lines with finite width ground plane embedded in thin-film circuits
Author :
Ponchak, George E. ; Dalton, Edan ; Tentzeris, Manos M. ; Papapolymerou, John
Author_Institution :
NASA Glenn Res. Center, Cleveland, OH, USA
Volume :
28
Issue :
2
fYear :
2005
fDate :
5/1/2005 12:00:00 AM
Firstpage :
320
Lastpage :
327
Abstract :
Three-dimensional (3-D) interconnects built upon multiple layers of polyimide are required for constructing 3-D circuits on CMOS (low resistivity) Si wafers, GaAs, and ceramic substrates. Thin-film microstrip lines (TFMS) with finite-width ground planes embedded in the polyimide are often used. However, the closely spaced TFMS fines are susceptible to high levels of coupling, which degrades the circuit performance. In this paper, finite-difference time domain (FDTD) analysis and experimental measurements are used to demonstrate that the ground planes must be connected by via holes to reduce coupling in both the forward and backward directions. Furthermore, it is shown that coupled microstrip lines establish a slotline type mode between the two ground planes and a dielectric waveguide type mode, and that the connected via holes recommended here eliminate these two modes.
Keywords :
III-V semiconductors; dielectric waveguides; finite difference time-domain analysis; gallium arsenide; integrated circuit interconnections; integrated circuit metallisation; integrated circuit packaging; joining processes; microstrip lines; thin film circuits; 3D interconnects; CMOS; GaAs; coupling; finite difference time domain analysis; finite width ground plane; multiple layers; polyimide; thin film circuits; thin film microstrip lines; Ceramics; Conductivity; Coupling circuits; Finite difference methods; Gallium arsenide; Integrated circuit interconnections; Microstrip; Polyimides; Thin film circuits; Time domain analysis; Coupling; crosstalk; finite-difference time domain (FDTD); microstrip;
fLanguage :
English
Journal_Title :
Advanced Packaging, IEEE Transactions on
Publisher :
ieee
ISSN :
1521-3323
Type :
jour
DOI :
10.1109/TADVP.2005.846933
Filename :
1427856
Link To Document :
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