DocumentCode :
800268
Title :
Structures and Magnetocrystalline Anisotropy of Single Crystal Permalloy Films Deposited by Sputtering Method
Author :
Narishige, S. ; Tadokoro, S. ; Mitsuoka, K. ; Sugita, Y.
Author_Institution :
Hitachi, Ltd.
Volume :
7
Issue :
5
fYear :
1992
fDate :
5/1/1992 12:00:00 AM
Firstpage :
395
Lastpage :
402
Abstract :
Single-crystal permalloy films were grown epitaxially on (001) GaAs substrates by sputtering. The relationship between the crystal orientations of the permalloy and GaAs were (001) NiFe // (001) GaAs, ≪100≫ NiFe // ≪110≫ GaAs. The crystal structures of permalloy films were deformed from cubic to tetragonal; films with positive and negative tetragonal strain have small and large respective unit cell volumes. Films with a small lattice constant in the film plane have a large strain distribution. The magnetocrystalline anisotropy of films with a large strain distribution is small, and that of films with a negative tetragonal strain is large.
Keywords :
Anisotropic magnetoresistance; Gallium arsenide; Magnetic anisotropy; Magnetic field induced strain; Magnetic films; Magnetic materials; Magnetostriction; Perpendicular magnetic anisotropy; Sputtering; Substrates;
fLanguage :
English
Journal_Title :
Magnetics in Japan, IEEE Translation Journal on
Publisher :
ieee
ISSN :
0882-4959
Type :
jour
DOI :
10.1109/TJMJ.1992.4565404
Filename :
4565404
Link To Document :
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