Title :
Wafer-Level Packaged Light-Emitting Diodes Using Photodielectric Resin
Author :
Kim, Sang-Mook ; Lee, Kwang-Cheol ; Yu, Young Moon ; Baek, Jong Hyeob ; Jung, Gun Young
Author_Institution :
Korea Photonics Technol. Inst., Gwangju
fDate :
6/1/2009 12:00:00 AM
Abstract :
A large area (1600 mum times 800 mum) high-brightness light-emitting diode (HB LED) employing rearranged metal pads and multipassivation layers is presented. To enlarge the active layer with a smaller mesa area and improve package productivity using large bonding pads, two electrodes were used to fabricate the LED; a primary electrode was in contact with the n, p-GaN as a conventional LED, and the second electrode was connected to the primary electrode with a passivation layer having photodielectric resin interposed between them. The LED was directly bonded to the metal-core printed circuit board without wire bonding or epoxy molding. The resultant HB LED has a low forward voltage ( ~3.2 V at 350 mA) due to the optimized n, p-contact scheme, and an optical power of 75 mW with no encapsulation.
Keywords :
III-V semiconductors; bonding processes; brightness; dielectric materials; electrodes; light emitting diodes; passivation; photodielectric effect; printed circuits; resins; wafer level packaging; GaN; HB LED; current 350 mA; directly bonded LED; high-brightness LED; large bonding pad; metal-core printed circuit board; multipassivation layer; n, p-contact scheme; package productivity; passivation layer; photodielectric resin; power 75 mW; primary electrode; rearranged metal pads; size 1600 mum; size 800 mum; voltage 3.2 V; wafer-level packaged light-emitting diodes; Light-emitting diodes (LEDs); photodielectric resin; rearranged metal; wafer-level package;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/LED.2009.2019834
