Title :
2×2 InGaAsP/InP laser amplifier gate switch arrays using reactive ion etching
Author :
Oh, Kwan Ryong ; Ahn, Joo-Heon ; Kim, Jeong Soo ; Lee, Seung Won ; Kim, Hong Man ; Pyun, Kwang Eui ; Park, Hyang Moo
Author_Institution :
Optoelectron. Section, Electron. & Telecommun. Res. Inst., Taejon, South Korea
fDate :
1/4/1996 12:00:00 AM
Abstract :
Waveguide integrated 2×2 InGaAsP laser amplifier gate switch arrays were fabricated using MOVPE and RIE. For the first time, RIE was applied as an etching process for the butt-coupling of the amplifier and the waveguide. A very low fibre-to-fibre loss of 1.2 dB was obtained, and the on/off extinction ratio exceeded 42 dB
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; optical fibre couplers; optical fibre losses; optical fibre subscriber loops; optical planar waveguides; photonic switching systems; semiconductor growth; semiconductor laser arrays; sputter etching; vapour phase epitaxial growth; 1.2 dB; InGaAsP-InP; MOVPE; access networks; butt-coupling; fibre-to-fibre loss; laser amplifier gate switch arrays; on/off extinction ratio; photonic space switch arrays; reactive ion etching; waveguide integrated switch arrays;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19960054
