Title :
An Integrated 700–1200-MHz Class-F PA With Tunable Harmonic Terminations in 0.13-
m CMOS
Author :
Sessou, Kossi K. ; Neihart, Nathan M.
Author_Institution :
Electr. & Comput. Eng. Dept., Iowa State Univ., Ames, IA, USA
Abstract :
A fully integrated class-F power amplifier (PA) with reconfigurable harmonic termination over a wide range of frequencies is presented. Reconfigurability is achieved by utilizing on-chip transformers as part of the output matching network. In addition, a stacked transistor architecture was used to boost the output power. The PA was fabricated in a 0.13- μm CMOS process and packaged in a 20-pin quad flat no-leads package. It was configured to operate at 700, 900, and 1200 MHz with a maximum measured saturated output power of +24.6 dBm with a power-added efficiency of 48.3%. The measured gain was 16.5 dB and was flat over the entire bandwidth. The total chip area, including pads, is 1.5 mm × 1.5 mm.
Keywords :
CMOS integrated circuits; field effect MMIC; integrated circuit packaging; microwave power amplifiers; CMOS; frequency 700 MHz to 1200 MHz; fully integrated class-F power amplifier; on-chip transformers; output matching network; power-added efficiency; reconfigurable harmonic termination; size 0.13 mum; stacked transistor architecture; total chip area; tunable harmonic terminations; Bandwidth; CMOS integrated circuits; Couplings; Harmonic analysis; Impedance; Impedance matching; Transistors; Power amplifiers (PAs); reconfigurable matching network;
Journal_Title :
Microwave Theory and Techniques, IEEE Transactions on
DOI :
10.1109/TMTT.2015.2403843