A normally off GaN n-MOSFET with Schottky-barrier source and drain on a Si-auto-doped p-GaN/Si

Author

Lee, Heon-Bok ; Cho, Hyun-Ick ; An, Hyun-Su ; Bae, Young-Ho ; Lee, Myoung-Bok ; Lee, Jung-Hee ; Hahm, Sung-Ho

Author_Institution

Nat. Educ. Center for Semicond. Technol., Kyungpook Nat. Univ., Daegu, South Korea

Volume

27

Issue

2

fYear

2006

Firstpage

81

Lastpage

83

Abstract

We have fabricated an enhancement-mode n-channel Schottky-barrier-MOSFET (SB-MOSFET) for the first time on a high mobility p-type GaN film grown on silicon substrate. The metal contacts were formed by depositing Al for source/drain contact and Au for gate contact, respectively. Fabricated SB-MOSFET exhibited a threshold voltage of 1.65 V, and a maximum transconductance(g_m) of 1.6 mS/mm at V_DS=5V, which belongs to one of the highest value in GaN MOSFET. The maximum drain current was higher than 3 mA/mm and the off-state drain current was as low as 3 nA/mm.

Keywords

III-V semiconductors; MOSFET; Schottky barriers; gallium compounds; semiconductor epitaxial layers; silicon; wide band gap semiconductors; 1.65 V; 5 V; Al source/drain contact; An gate contact; GaN:Si-Si; SB-MOSFET; Schottky barrier; Si substrate; Si-auto-doped p-GaN/Si; enhancement-mode n-channel MOSFET; high mobility film; metal contacts; normally off n-MOSFET; off-state drain current; threshold voltage; transconductance; CMOS technology; Dielectric substrates; Electron mobility; Gallium nitride; Leakage current; MOSFET circuits; Schottky barriers; Silicon; Temperature; Transconductance; GaN; MOSFET; Schottky barrier (SB);

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/LED.2005.862675

Filename

1580588