DocumentCode :
800539
Title :
High work function IrxSi gates on HfAlON p-MOSFETs
Author :
Wu, C.H. ; Yu, D.S. ; Chin, Albert ; Wang, S.J. ; Li, M.-F. ; Zhu, C. ; Hung, B.F. ; McAlister, S.P.
Author_Institution :
Dept. of Electron. Eng., Nat. Cheng-Kung Univ., Tainan, Taiwan
Volume :
27
Issue :
2
fYear :
2006
Firstpage :
90
Lastpage :
92
Abstract :
We have fabricated the fully silicided IrxSi-gated p-MOSFETs on HfAlON gate dielectric with 1.7-nm equivalent oxide thickness. After 950°C rapid thermal annealing, the fully IrxSi/HfAlON device has high effective work function of 4.9 eV, high peak hole mobility of 80 cm2/V·s, and the advantage of being process compatible to the current VLSI fabrication line.
Keywords :
MOSFET; aluminium compounds; dielectric materials; hafnium compounds; iridium compounds; rapid thermal annealing; work function; 1.7 nm; 4.9 eV; 950 C; HfAlON-IrSi; MOSFET; VLSI fabrication; hole mobility; rapid thermal annealing; work function; Amorphous materials; Atherosclerosis; Dielectric devices; Hafnium oxide; MOSFET circuits; Personal digital assistants; Plasma immersion ion implantation; Rapid thermal annealing; Rapid thermal processing; Very large scale integration; HfAlON; IrSi; MOSFET;
fLanguage :
English
Journal_Title :
Electron Device Letters, IEEE
Publisher :
ieee
ISSN :
0741-3106
Type :
jour
DOI :
10.1109/LED.2005.862687
Filename :
1580591
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=800539
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