Title :
Microwave p-i-n diodes and switches based on 4H-SiC
Author :
Camara, N. ; Zekentes, K. ; Romanov, L.P. ; Kirillov, A.V. ; Boltovets, M.S. ; Vassilevski, K.V. ; Haddad, G.
Author_Institution :
MRG-IESL, Found. for Res. & Technol., Crete, Greece
Abstract :
The 4H-SiC p-i-n diodes were designed, fabricated, and characterized for use in microwave applications. The diodes with mesa structure diameters between 80 and 150 μm, exhibited a blocking voltage of 1100 V, a 100-mA differential resistance of 1-2 /spl Omega/, a capacitance below 0.5 pF at a punchthrough voltage of 100 V and a carrier effective lifetime between 15-27 ns. X-band microwave switches based on 4H-SiC p-i-n diodes are demonstrated for the first time. The switches exhibited insertion loss as low as 0.7 dB, isolation up to 25 dB and were able to handle microwave power up to 2.2 kW in isolation mode and up to 0.4 kW in insertion mode.
Keywords :
integrated circuit design; microwave diodes; microwave switches; p-i-n diodes; silicon compounds; 100 V; 100 mA; 1100 V; 80 to 150 micron; SiC; microwave p-i-n diodes; microwave switches; punchthrough voltage; Charge carrier lifetime; Communication switching; Electromagnetic heating; Gallium arsenide; Microwave devices; P-i-n diodes; Power semiconductor switches; Semiconductor diodes; Silicon carbide; Voltage; Microwave switches; p-i-n diode; silicon carbide;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/LED.2005.862686
