Stability of amorphous-silicon TFTs deposited on clear plastic substrates at 250°C to 280° C

Author

Long, K. ; Kattamis, A.Z. ; Cheng, I.-C. ; Gleskova, H. ; Wagner, S. ; Sturm, J.C.

Author_Institution

Dept. of Electr. Eng., Princeton Univ., NJ, USA

Volume

27

Issue

2

fYear

2006

Firstpage

111

Lastpage

113

Abstract

Amorphous-silicon (a-Si) thin-film transistors (TFTs) were fabricated on a free-standing new clear plastic substrate with high glass transition temperature (T_g) of >315° C and low coefficient of thermal expansion of <10 ppm/ ° C. Maximum process temperatures on the substrates were 250°C and 280°C, close to the temperatures used in industrial a-Si TFT production on glass substrates. The first TFTs made at 280°C have dc characteristics comparable to TFTs made on glass. The stability of the 250°C TFTs on clear plastic is approaching that of TFTs made on glass at 300°C-350°C. TFT characteristics and stability depend only on process temperature and not on substrate type.

Keywords

amorphous semiconductors; circuit stability; flexible electronics; glass transition; high-temperature electronics; plastics; substrates; thermal expansion; thin film transistors; 250 C; 280 C; TFT; amorphous-silicon; clear plastic substrate; device stability; glass substrates; high glass transition temperature; maximum process temperature; thermal expansion; thin-film transistor; Active matrix organic light emitting diodes; Buffer layers; Dielectric substrates; Glass industry; Optical buffering; Optical device fabrication; Plastics; Stability; Temperature; Thin film transistors; Amorphous-silicon (a-Si); device stability; flexible; plastic substrate; thin-film transistor (TFT);

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/LED.2005.863147

Filename

1580598