Analytical Modeling of Dielectric Pocket Double-Gate MOSFET Incorporating Hot-Carrier-Induced Interface Charges

Author

Kumari, Vandana ; Saxena, Manoj ; Gupta, R.S. ; Gupta, Madhu

Author_Institution

Dept. of Electron. Sci., Univ. of Delhi, New Delhi, India

Volume

14

Issue

1

fYear

2014

fDate

Mar-14

Firstpage

390

Lastpage

399

Abstract

In this paper, the impact of interface charges on the performance of a short-channel symmetric dielectric pocket double-gate (DP-DG) MOSFET has been investigated. An analytical drain current model for DP-DG MOSFET has been developed, which is also useful for investigating the impact of dual-material gate on DP-DG architecture. The proposed model is verified using ATLAS 3-D simulator. In addition, exhaustive simulation has been carried out to address the impact of interface charges on the reliability issues of various devices, i.e., DP-DG, double-gate, and dielectric pocket architectures in terms of gate leakage current, electron temperature, and impact of interface charges on the threshold voltage lowering. Analog and digital performances have also been investigated and compared with the other devices.

Keywords

MOSFET; dielectric materials; hot carriers; leakage currents; semiconductor device models; ATLAS 3D simulator; analytical drain current model; dielectric pocket double gate MOSFET; dual material gate; electron temperature; gate leakage current; hot carrier induced interface charges; short channel MOSFET; threshold voltage; Degradation; Dielectrics; Hot carriers; Logic gates; MOSFET; Materials; Metals; Analytical model; CMOS inverter; dielectric pocket; double gate; dual-material gate; hot-carrier-induced charges;

fLanguage

English

Journal_Title

Device and Materials Reliability, IEEE Transactions on

Publisher

ieee

ISSN

1530-4388

Type

jour

DOI

10.1109/TDMR.2013.2278077

Filename

6578076