Title :
A single-sided PHINES SONOS memory featuring high-speed and low-power applications
Author :
Jau-Yi Wu ; Ming-Hsiu Lee ; Tzu-Hsuan Hsu ; Hsiang-Lan Lung ; Rich Liu ; Chih-Yuan Lu
Author_Institution :
Emerging Central Lab., Macronix Int. Co. Ltd., Hsinchu, Taiwan
Abstract :
A single-sided PHINES SONOS memory with hot-hole injection in program operation and Fowler-Nordheim (FN) tunneling in erase operation has been demonstrated for high program speed and low power applications. High programming speed (/spl Delta/VT/program time) of 5 V/20 μs, low power consumption of P/E, high endurance of 10 K, good retention, and scaling capability can be demonstrated.
Keywords :
field effect memory circuits; flash memories; high-speed integrated circuits; low-power electronics; 10 K; Fowler-Nordheim tunneling; erase operation; high-speed application; hot-hole injection; hot-hole program; low-power application; nonvolatile flash memory; single-sided PHINES SONOS memory; CMOS technology; Electrons; Energy consumption; Fabrication; Flash memory; Hot carriers; Lungs; Nonvolatile memory; SONOS devices; Tunneling; Fowler–Nordheim (FN) erase; PHINES; SONOS; hot-hole (HH) program; nonvolatile flash memory (NFM);
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/LED.2005.863135
