DocumentCode :
800703
Title :
Wide-band VCOs in SiGe production technology operating up to about 70 GHz
Author :
Li, H. ; Rein, H.M. ; Makon, R.E. ; Schwerd, M.
Author_Institution :
Ruhr-Univ. Bochum, Germany
Volume :
13
Issue :
10
fYear :
2003
Firstpage :
425
Lastpage :
427
Abstract :
Multipurpose VCOs with wide tuning range and oscillation frequencies up to 74 GHz (on wafer) and 69 GHz (mounted chip, with output buffer), respectively, have been fully integrated in a commercial SiGe production technology. To the best of the authors´ knowledge these are record values for commercially available Si-based technologies, despite the moderate transistor f/sub T/ (62 GHz). The oscillation frequency can easily be dropped down to 41.5 GHz by cutting interconnection lines in the upper metallization layer. The phase noise obtained depends on the frequency range chosen and is sufficiently low for the intended applications.
Keywords :
Ge-Si alloys; MIMIC; circuit tuning; integrated circuit interconnections; integrated circuit noise; millimetre wave oscillators; phase noise; 41.5 to 74 GHz; SiGe; VCOs; frequency range; interconnection lines; millimeter-wave VCO; oscillation frequencies; oscillation frequency; output buffer; phase noise; production technology; tuning range; upper metallization layer; Frequency; Germanium silicon alloys; Integrated circuit interconnections; Metallization; Microstrip; Phase noise; Production; Silicon germanium; Voltage-controlled oscillators; Wideband;
fLanguage :
English
Journal_Title :
Microwave and Wireless Components Letters, IEEE
Publisher :
ieee
ISSN :
1531-1309
Type :
jour
DOI :
10.1109/LMWC.2003.818520
Filename :
1235965
Link To Document :
بازگشت