A dual-band (13/22-GHz) VCO based on resonant mode switching

Author

Baek, Donghyun ; Kim, Jeonggeun ; Hong, Songcheol

Author_Institution

Dept. of Electr. Eng., Korea Adv. Inst. of Sci. & Technol., South Korea

Volume

13

Issue

10

fYear

2003

Firstpage

443

Lastpage

445

Abstract

A dual band voltage-controlled oscillator (VCO) that can cover 13- and 22-GHz bands is proposed and implemented using an InGaP/GaAs heterojunction bipolar transistor (HBT) technology. The frequency band is selected by mode switching between differential mode at low frequency and common mode at high frequency. The differential mode means that voltages appearing at two tank ports have opposite polarities and the common mode, the same polarities. Mode switching allows the VCO to operate at two resonant frequencies with a single LC tank. The measured phase-noise performances of a dual band VCO are -108 and -106 dBc/Hz at 1 MHz offset at the frequencies of 13 and 22 GHz, respectively, while drawing 22 mA and 16 mA from a 4-V supply. Switching times between two bands are less than 24 ns.

Keywords

III-V semiconductors; MMIC oscillators; bipolar MMIC; gallium arsenide; gallium compounds; heterojunction bipolar transistors; indium compounds; phase noise; voltage-controlled oscillators; 13 GHz; 16 mA; 22 GHz; 22 mA; 4 V; HBT; InGaP-GaAs; InGaP/GaAs; VCO; common mode; differential mode; dual band voltage-controlled oscillator; phase-noise performances; resonant mode switching; switching times; tank ports; Dual band; Frequency measurement; Gallium arsenide; Heterojunction bipolar transistors; Performance evaluation; Phase measurement; Resonance; Resonant frequency; Voltage; Voltage-controlled oscillators;

fLanguage

English

Journal_Title

Microwave and Wireless Components Letters, IEEE

Publisher

ieee

ISSN

1531-1309

Type

jour

DOI

10.1109/LMWC.2003.817114

Filename

1235971