InGaAs-InP P-I (MQW)-N surface-normal electroabsorption modulators exhibiting better than 8:1 contrast ratio for 1.55-μm applications grown by gas-source MBE

Author

Pathak, R.N. ; Goossen, K.W. ; Cunningham, J.E. ; Jan, W.Y.

Author_Institution

AT&T Bell Labs., Holmdel, NJ, USA

Volume

6

Issue

12

fYear

1994

Firstpage

1439

Lastpage

1441

Abstract

We report growth of In/sub 0.53/Ga/sub 0.47/ As-InP multiple quantum well (MQW) modulators operating at 1.55 μm for fiber-to-the-home applications. By employing a 200-period InGaAs-InP MQW stack in the intrinsic region of a p-i-n structure and working in reflection, we have been able to realize surface-normal modulator devices that exhibit better than an 8:1 contrast ratio. This is the highest contrast ratio reported to date for this type of device working at this wavelength.

Keywords

chemical beam epitaxial growth; electro-optical modulation; electroabsorption; gallium arsenide; indium compounds; integrated optics; optical fibre subscriber loops; semiconductor growth; semiconductor quantum wells; 1.55 micron; 200-period InGaAs-InP MQW stack; In/sub 0.53/Ga/sub 0.47/As-InP; InGaAs-InP P-I (MQW)-N surface-normal electroabsorption modulators; contrast ratio; fiber-to-the-home applications; gas-source MBE; intrinsic region; multiple quantum well; p-i-n structure; reflection; surface-normal modulator devices; Absorption; Lattices; Optical devices; Optical fiber devices; Optical modulation; Optical reflection; Optical surface waves; PIN photodiodes; Quantum well devices; Resonance;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/68.392218

Filename

392218