Contact reflectivity effects on thin p-clad InGaAs single quantum-well lasers

Author

Wu, C.H. ; Zory, P.S. ; Emanuel, M.A.

Author_Institution

Dept. of Electr. Eng., Florida Univ., Gainesville, FL, USA

Volume

6

Issue

12

fYear

1994

Firstpage

1427

Lastpage

1429

Abstract

Thin p-clad InGaAs quantum-well (QW) lasers with either Au or Ni as the p-contact metal have been fabricated. Due to reduced contact reflectivity, the Ni contact lasers hare significantly higher threshold currents and lower slope efficiencies than the Au contact lasers. In addition, operating wavelength differences greater than 50 mn are observed for cavity lengths between 250 and 700 microns, with large wavelength jumps occurring at shorter and longer cavity lengths. The measured wavelength effects are explained by incorporating the optical mode loss difference between the two laser types into quantum-well laser theory.<>

Keywords

III-V semiconductors; electrical contacts; gallium arsenide; indium compounds; quantum well lasers; reflectivity; semiconductor-metal boundaries; 250 to 700 micron; Au; Au contact lasers; InGaAs; Ni; Ni contact lasers; cavity lengths; contact reflectivity effects; operating wavelength differences; optical mode loss difference; p-contact metal; slope efficiencies; thin p-clad InGaAs single quantum-well lasers; threshold currents; wavelength jumps; Gold; Indium gallium arsenide; Laser modes; Laser theory; Loss measurement; Optical losses; Quantum well lasers; Reflectivity; Threshold current; Wavelength measurement;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/68.392222

Filename

392222