Title :
Dependence of linewidth enhancement factor on crystal orientation in strained quantum well lasers
Author :
Ohtoshi, T. ; Kuroda, T. ; Niwa, A. ; Tsuji, S.
Author_Institution :
Central Res. Lab., Hitachi Ltd., Tokyo, Japan
Abstract :
The linewidth enhancement factor a in strained quantum well (QW) lasers is estimated theoretically for various crystallographic directions. It is found that the a factor in a strained In/sub 0.7/Ga/sub 0.3/As-InP QW laser on a [111] substrate is less than 1.4, much lower than for conventional strained QW lasers on [001] substrates.<>
Keywords :
III-V semiconductors; crystal orientation; crystallography; gallium arsenide; indium compounds; laser theory; quantum well lasers; spectral line breadth; In/sub 0.7/Ga/sub 0.3/As-InP QW laser //; crystal orientation; crystallographic directions; linewidth enhancement factor; strained quantum well lasers; Capacitive sensors; Crystalline materials; Crystallography; Laser theory; Optical materials; Quantum mechanics; Quantum well lasers; Semiconductor lasers; Substrates; Wave functions;
Journal_Title :
Photonics Technology Letters, IEEE
