Impedance characteristics of quantum-well lasers

Author

Weisser, S. ; Esquivias, I. ; Tasker, P.J. ; Ralston, J.D. ; Romero, B. ; Rosenzweig, J.

Author_Institution

Fraunhofer-Inst. fur Angewandte Festkorperphys., Freiburg, Germany

Volume

6

Issue

12

fYear

1994

Firstpage

1421

Lastpage

1423

Abstract

We derive theoretical expressions for the impedance of quantum-well lasers below and above threshold based on a simple rate equation model. These electrical laser characteristics are shown to be dominated by purely electrical parameters related to carrier capture/transport and carrier re-emission. The results of on-wafer measurements of the impedance of high-speed In/sub 0.35/Ga/sub 0.65/As/GaAs multiple-quantum-well lasers are shown to be in good agreement with this simple model, allowing us to extract the effective carrier escape time and the effective carrier lifetime, and to estimate the effective carrier capture/transport time.<>

Keywords

III-V semiconductors; carrier lifetime; carrier mobility; electric impedance; gallium arsenide; indium compounds; laser theory; quantum well lasers; semiconductor device models; In/sub 0.35/Ga/sub 0.65/As/GaAs multiple-quantum-well lasers; InGaAs-GaAs; above threshold; below threshold; carrier capture; carrier re-emission; carrier transport; effective carrier capture; effective carrier escape time; effective carrier lifetime; electrical laser characteristics; electrical parameters; high-speed; impedance characteristics; on-wafer measurements; quantum-well lasers; simple rate equation model; transport time; Charge carrier lifetime; Equations; Gallium arsenide; Impedance measurement; Laser modes; Laser theory; Life estimation; Quantum well devices; Quantum well lasers; Time measurement;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/68.392224

Filename

392224