DocumentCode :
800851
Title :
Simple analysis of carrier transport and buildup in separate confinement heterostructure quantum well lasers
Author :
Alam, Muhammad ; Lundstrom, Mark
Author_Institution :
Dept. of Electr. Eng., Purdue Univ., West Lafayette, IN, USA
Volume :
6
Issue :
12
fYear :
1994
Firstpage :
1418
Lastpage :
1420
Abstract :
A simple, analytical model for carrier transport and buildup in the separate confinement layer of a quantum well laser is developed. The time constant characterizing the low-frequency roll-off is separated into components describing electron and hole transport and components related to the charge storage effects arising from electron and hole capture. In contrast to previous work, the analysis shows that both the transport and capture related delays are sensitive to the placement of the well within the separate confinement heterostructure and that the carrier concentrations change abruptly across the quantum well.<>
Keywords :
carrier density; hole traps; laser theory; quantum well lasers; semiconductor device models; analytical model; carrier buildup; carrier concentrations; carrier transport; charge storage effects; electron capture; electron transport; hole capture; hole transport; low-frequency roll-off; sensitive; separate confinement heterostructure; separate confinement heterostructure quantum well lasers; separate confinement layer; time constant; Analytical models; Carrier confinement; Charge carrier density; Charge carrier processes; Frequency; Laser modes; Potential well; Quantum well lasers; Radiative recombination; Spontaneous emission;
fLanguage :
English
Journal_Title :
Photonics Technology Letters, IEEE
Publisher :
ieee
ISSN :
1041-1135
Type :
jour
DOI :
10.1109/68.392225
Filename :
392225
Link To Document :
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