Title :
1.95-μm strained InGaAs-InGaAsP-InP distributed-feedback quantum-well lasers
Author :
Martinelli, R.U. ; Menna, R.J. ; Olsen, G.H. ; Vermaak, J.S.
Author_Institution :
David Sarnoff Res. Center, Princeton, NJ, USA
Abstract :
Distributed-feedback emission from strained InGaAs-InGaAsP-InP quantum well lasers has been examined over a temperature range of 130 K to 300 K. Continuous single-mode output from 190 to 300 K with a side-mode-suppression ratio of about 10 dB was observed. The wavelength was 1.95 μm at 273 K and tuned at a rate of 0.13 nm/K. The current-tuning rate was 0.0043 nm/mA (-340 MHz/mA) at 273 and 283 K.
Keywords :
III-V semiconductors; gallium arsenide; gallium compounds; indium compounds; laser modes; laser tuning; quantum well lasers; stimulated emission; 1.95 mum; 130 to 300 K; 273 K; 283 K; InGaAs-InGaAsP-InP; InGaAs-InGaAsP-InP distributed-feedback quantum-well lasers; continuous single-mode output; current-tuning rate; distributed-feedback emission; side-mode-suppression ratio; strained InGaAs-InGaAsP-InP quantum well lasers; Epitaxial growth; Epitaxial layers; Etching; Gratings; Indium gallium arsenide; Laser modes; Optical waveguides; Quantum well lasers; Temperature distribution; Waveguide lasers;
Journal_Title :
Photonics Technology Letters, IEEE
