Title :
1.3-μm wavelength, InGaAsP-InP folded-cavity surface-emitting lasers grown by gas-source molecular-beam epitaxy
Author :
Chih-Ping Chao ; Guang-Jye Shiau ; Forrest, S.R.
Author_Institution :
Dept. of Electr. Eng., Princeton Univ., NJ, USA
Abstract :
A 1.3-μm wavelength, strained multiple quantum well InGaAsP-InP folded-cavity surface-emitting laser was fabricated using CH4:H2 reactive ion etching to form the 45/spl deg/ angled vertical output facet. A pulsed threshold current of 45 mA and a 20% efficiency for the surface-emitted light were achieved for 550 μm-long by 5 μm-wide devices. The threshold current is the lowest reported for folded-cavity surface-emitting lasers operating at this wavelength, making the devices suitable for many optoelectronic smart pixel and interconnection applications. To our knowledge, this is the first demonstration of an InP-based folded-cavity structure using CH4:H2 reactive ion etching.
Keywords :
III-V semiconductors; gallium arsenide; gallium compounds; indium compounds; laser cavity resonators; molecular beam epitaxial growth; optical fabrication; semiconductor growth; semiconductor lasers; sputter etching; surface emitting lasers; 1.3 mum; 20 percent; 45 mA; 45/spl deg/ angled vertical output facet; 5 mum; 550 mum; CH/sub 4/:H/sub 2/ reactive ion etching; H/sub 2/; InGaAsP-InP; InGaAsP-InP folded-cavity surface-emitting lasers; folded-cavity surface-emitting laser; folded-cavity surface-emitting lasers; gas-source molecular-beam epitaxy; interconnection applications; optoelectronic smart pixel; pulsed threshold current; strained multiple quantum well; surface-emitted light; threshold current; Chaotic communication; Etching; Gas lasers; Molecular beam epitaxial growth; Quantum well lasers; Smart pixels; Surface emitting lasers; Surface waves; Threshold current; Vertical cavity surface emitting lasers;
Journal_Title :
Photonics Technology Letters, IEEE
