1.3-μm wavelength, InGaAsP-InP folded-cavity surface-emitting lasers grown by gas-source molecular-beam epitaxy

A 1.3-μm wavelength, strained multiple quantum well InGaAsP-InP folded-cavity surface-emitting laser was fabricated using CH₄:H₂ reactive ion etching to form the 45/spl deg/ angled vertical output facet. A pulsed threshold current of 45 mA and a 20% efficiency for the surface-emitted light were achieved for 550 μm-long by 5 μm-wide devices. The threshold current is the lowest reported for folded-cavity surface-emitting lasers operating at this wavelength, making the devices suitable for many optoelectronic smart pixel and interconnection applications. To our knowledge, this is the first demonstration of an InP-based folded-cavity structure using CH₄:H₂ reactive ion etching.