Dielectrically-bonded long wavelength vertical cavity laser on GaAs substrates using strain-compensated multiple quantum wells

Author

Chua, C.L. ; Lin, C.H. ; Zhu, Z.H. ; Lo, Y.H. ; Hong, Mingyi ; Mannaerts, J.P. ; Bhat, R.

Author_Institution

Sch. of Electr. Eng., Cornell Univ., Ithaca, NY, USA

Volume

6

Issue

12

fYear

1994

Firstpage

1400

Lastpage

1402

Abstract

We present a novel low temperature bonding technique for fabricating long wavelength vertical cavity surface emitting lasers (VCSEL´s). The technique relies on a 750 /spl Aring/-thick intermediate spin-on glass layer to join a highly efficient InP-based InGaAs-InGaAsP strain-compensated multiple quantum well (SC-MQW) gain medium on a GaAs substrate. We fabricated the device on GaAs in order to take advantage of highly reflective AlAs-GaAs Bragg reflectors. The optically-pumped device has a low threshold pump power of 4.2 kW/cm² at room temperature and operates at a wavelength of 1.44 μm.

Keywords

III-V semiconductors; distributed Bragg reflector lasers; gallium arsenide; gallium compounds; indium compounds; laser cavity resonators; optical fabrication; optical pumping; quantum well lasers; surface emitting lasers; wafer bonding; 1.44 mum; 750 A; AlAs-GaAs; GaAs; GaAs substrates; InGaAs-InGaAsP; InP-based InGaAs-InGaAsP strain-compensated multiple quantum well; dielectrically-bonded long wavelength vertical cavity laser; gain medium; highly reflective AlAs-GaAs Bragg reflectors; intermediate spin-on glass layer; low temperature bonding technique; low threshold pump power; optically-pumped device; room temperature; strain-compensated multiple quantum wells; Bonding; Dielectrics; Gallium arsenide; Optical devices; Optical surface waves; Quantum well lasers; Surface emitting lasers; Surface waves; Temperature; Vertical cavity surface emitting lasers;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/68.392231

Filename

392231