Title :
W-band high efficiency InP-based power HEMT with 600 GHz fmax
Author :
Smith, P.M. ; Liu, S.-M.J. ; Kao, M.-Y. ; Ho, P. ; Wang, Stanley C. ; Duh, K.H.G. ; Fu, S.T. ; Chao, P.C.
Author_Institution :
Lockhead Martin Electron. Lab., Syracuse, NY, USA
fDate :
7/1/1995 12:00:00 AM
Abstract :
We have developed 0.1-μm gate-length InAlAs-InGaAs-InP power HEMT´s with record efficiency and power gain at 94 GHz. A 200 μm gate-width device has produced 58 mW output power with 6.4 dB power gain and 33% power-added efficiency. The extrapolated fmax of 600 GHz is the highest reported to date for any transistor, and smaller, 30-μm devices fabricated on the same wafer exhibit excellent noise figure (1.4 dB at 94 GHz), demonstrating the applicability of this technology to multifunction MMICs.
Keywords :
III-V semiconductors; equivalent circuits; field effect MIMIC; indium compounds; millimetre wave field effect transistors; millimetre wave power transistors; power HEMT; power field effect transistors; 0.1 micron; 1.4 dB; 200 micron; 30 micron; 33 percent; 58 mW; 6.4 dB; 600 GHz; 94 GHz; EHF; InAlAs-InGaAs-InP; MM-wave FET; W-band; high efficiency; multifunction MMICs; power HEMT; Chaos; Gain; HEMTs; Indium gallium arsenide; MMICs; MODFETs; PHEMTs; Power amplifiers; Power generation; Power transistors;
Journal_Title :
Microwave and Guided Wave Letters, IEEE
