• DocumentCode
    801333
  • Title

    Single Crystal Fe Films Prepared by a Low Kinetic Energy Sputtering Method

  • Author

    Ishii, K. ; Motai, H.

  • Author_Institution
    Utsunomiya University.
  • Volume
    7
  • Issue
    10
  • fYear
    1992
  • Firstpage
    839
  • Lastpage
    843
  • Abstract
    The ga-flow-sputtring (GFS) method, in which atoms with very low kinetic energies (≪0.1 eV) are deposited, was studied as a means of growing single-crystal ¿-Fe films on MgO(001). These films were characterized by reflection high-energy electron diffraction, X-ray diffraction and Kerr-effect magnetometry. The results suggested that single-crystal Fe films grow at a substrate temperature of about 400°C and under a pressure of 1 Torr, at a growth rate of 1100 Ã…/min.
  • Keywords
    Argon; Atomic layer deposition; Iron; Kinetic energy; Magnetic films; Magnetics Society; Molecular beam epitaxial growth; Optical films; Sputtering; Substrates;
  • fLanguage
    English
  • Journal_Title
    Magnetics in Japan, IEEE Translation Journal on
  • Publisher
    ieee
  • ISSN
    0882-4959
  • Type

    jour

  • DOI
    10.1109/TJMJ.1992.4565509
  • Filename
    4565509
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=801333