Title :
Single Crystal Fe Films Prepared by a Low Kinetic Energy Sputtering Method
Author :
Ishii, K. ; Motai, H.
Author_Institution :
Utsunomiya University.
Abstract :
The ga-flow-sputtring (GFS) method, in which atoms with very low kinetic energies (≪0.1 eV) are deposited, was studied as a means of growing single-crystal ¿-Fe films on MgO(001). These films were characterized by reflection high-energy electron diffraction, X-ray diffraction and Kerr-effect magnetometry. The results suggested that single-crystal Fe films grow at a substrate temperature of about 400°C and under a pressure of 1 Torr, at a growth rate of 1100 Ã
/min.
Keywords :
Argon; Atomic layer deposition; Iron; Kinetic energy; Magnetic films; Magnetics Society; Molecular beam epitaxial growth; Optical films; Sputtering; Substrates;
Journal_Title :
Magnetics in Japan, IEEE Translation Journal on
DOI :
10.1109/TJMJ.1992.4565509