DocumentCode :
801538
Title :
Table-based nonlinear HEMT model extracted from time-domain large-signal measurements
Author :
Currás-Francos, M. Carmen
Author_Institution :
Dept. de Tecnologia Electron., Univ. of Vigo, Spain
Volume :
53
Issue :
5
fYear :
2005
fDate :
5/1/2005 12:00:00 AM
Firstpage :
1593
Lastpage :
1600
Abstract :
This paper presents an empirical table-based nonlinear HEMT model fully extracted from time-domain large-signal measurements. A simple and direct extraction procedure, based on a vector nonlinear network analyzer measurement system with load-pull facilities, demonstrates by experimental results on microwave transistors how a very reduced number of measurements is enough to obtain the current and charge generators to fill a lookup model. Table-based model extraction, implementation, and validation are described in this paper.
Keywords :
high electron mobility transistors; microwave transistors; semiconductor device measurement; semiconductor device models; MODFET; field-effect transistors; load-pull facilities; lookup model; measurement system; microwave transistors; nonlinear HEMT model; time-domain large-signal measurements; vector nonlinear network analyzer; Analytical models; Charge measurement; Current measurement; Data mining; HEMTs; Microwave FETs; Microwave measurements; Microwave transistors; Pulse measurements; Time domain analysis; Field-effect transistors (FETs); MODFETs; modeling;
fLanguage :
English
Journal_Title :
Microwave Theory and Techniques, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9480
Type :
jour
DOI :
10.1109/TMTT.2005.847049
Filename :
1427962
Link To Document :
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