DocumentCode :
801619
Title :
125-GHz Diode Frequency Doubler in 0.13- 
CMOS
Author :
Mao, Chuying ; Nallani, Chakravartula Shashank ; Sankaran, Swaminathan ; Seok, Eunyoung ; Kenneth, K.O.
Author_Institution :
Dept. of Electr. & Comput. Eng., Univ. of Florida, Gainesville, FL
Volume :
44
Issue :
5
fYear :
2009
fDate :
5/1/2009 12:00:00 AM
Firstpage :
1531
Lastpage :
1538
Abstract :
The first mm-wave Schottky diode frequency doubler fabricated in CMOS is demonstrated. The doubler built in 130-nm CMOS uses a balanced topology with two shunt Schottky barrier diodes, and exhibits ~ 10-dB conversion loss as well as -1.5-dBm output power at 125 GHz. The input matching is better than -10 dB from 61 to 66 GHz. The rejection of fundamental signal at output is greater than 12 dB for input frequency from 61 to 66 GHz. The doubler can generate signals up to 140 GHz.
Keywords :
CMOS integrated circuits; Schottky diodes; frequency multipliers; millimetre wave diodes; network topology; CMOS topology; conversion loss; frequency 125 GHz; mm-wave diode frequency doubler; shunt Schottky barrier diodes; size 0.13 mum; CMOS technology; Capacitance; Cathodes; Circuits; Cutoff frequency; Frequency conversion; Power generation; Schottky barriers; Schottky diodes; Topology; CMOS; Schottky barrier diode; doubler; frequency multiplication; millimeter wave; terahertz;
fLanguage :
English
Journal_Title :
Solid-State Circuits, IEEE Journal of
Publisher :
ieee
ISSN :
0018-9200
Type :
jour
DOI :
10.1109/JSSC.2009.2016995
Filename :
4907318
Link To Document :
