DocumentCode
801734
Title
Systematic linearity analysis of RFICs using a two-port lumped-nonlinear-source model
Author
Liang, Qingqing ; Andrews, Joel M. ; Cressler, John D. ; Niu, Guofu
Author_Institution
Sch. of Electr. & Comput. Eng., Georgia Inst. of Technol., Atlanta, GA, USA
Volume
53
Issue
5
fYear
2005
fDate
5/1/2005 12:00:00 AM
Firstpage
1745
Lastpage
1755
Abstract
A frequency-domain lumped-nonlinear-source behavioral model is presented. This generalized two-port nonlinear model is used to characterize the linearity of either RF devices or circuits. Similar to two-port ac behavioral models (i.e., using S-, Y-, Z-, or H-parameters), this nonlinear model supports combinations such as shunt, series, and cascade, and thus is suitable for systematic analysis. This model is then applied to analyze the impact of harmonic impedance on the second-order intermodulation and third-order intermodulation of a state-of-the-art SiGe HBTs and circuits. Simple and general linearity expressions are then derived. Harmonic load-pull simulations and measurements are used to demonstrate the usefulness of the proposed analysis technique.
Keywords
Ge-Si alloys; frequency-domain analysis; heterojunction bipolar transistors; lumped parameter networks; nonlinear network analysis; radiofrequency integrated circuits; SiGe HBT; Volterra series; behavioral models; harmonic impedance; harmonic load-pull; intermodulation distortion; linearity optimization; lumped-nonlinear source model; radiofrequency integrated circuit; systematic linearity analysis RFIC; Analytical models; Circuit simulation; Frequency domain analysis; Germanium silicon alloys; Harmonic analysis; Impedance; Linearity; Radio frequency; Radiofrequency integrated circuits; Silicon germanium; Behavioral model; Volterra series; harmonic load–pull; linearity optimization; nonlinear source;
fLanguage
English
Journal_Title
Microwave Theory and Techniques, IEEE Transactions on
Publisher
ieee
ISSN
0018-9480
Type
jour
DOI
10.1109/TMTT.2005.847101
Filename
1427979
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