DocumentCode :
801743
Title :
A Fully Integrated 2 
2 Power Amplifier for Dual Band MIMO 802.11n WLAN Application Using SiGe HBT Technology
Author :
Liao, Hsin-Hsing ; Jiang, Hao ; Shanjani, Payman ; King, Joseph ; Behzad, Arya
Author_Institution :
Broadcom Corp., San Diego, CA
Volume :
44
Issue :
5
fYear :
2009
fDate :
5/1/2009 12:00:00 AM
Firstpage :
1361
Lastpage :
1371
Abstract :
A fully monolithic 2 times 2(2 times 5 GHz-band, 2 times 2.4 GHz-band) power amplifier (PA) implemented in a 0.18 mum Silicon Germanium (SiGe) HBT process has been developed for a dual band MIMO 802.11n WLAN system. In order to achieve the required performance for the 5 GHz band while maintaining a high level of integration, different approaches have been investigated. A special Through-Wafer-Via (TWV) process on Si wafer was developed and utilized for this 2 times 2 PA. From fabricated 2 times 2 chip measurement results, both 5 GHz-band and 2.4 GHz-band PAs show above 17 dBm linear power output for -28 dB EVM and more than 18 dBm with >14% efficiency for 5 GHz-band and 19% efficiency for 2.4 GHz-band at -25 dB EVM linear output.
Keywords :
MIMO communication; heterojunction bipolar transistors; power amplifiers; silicon compounds; wireless LAN; HBT technology; SiGe; WLAN application; dual band MIMO; fully integrated power amplifier; CMOS technology; Germanium silicon alloys; Heterojunction bipolar transistors; MIMO; OFDM; Packaging; Peak to average power ratio; Silicon germanium; Transceivers; Wireless LAN; 802.11n; MIMO; OFDM; Power amplifiers; SiGe; WLAN;
fLanguage :
English
Journal_Title :
Solid-State Circuits, IEEE Journal of
Publisher :
ieee
ISSN :
0018-9200
Type :
jour
DOI :
10.1109/JSSC.2009.2015817
Filename :
4907329
Link To Document :
