Title :
Characterisation of Pd Schottky barrier on n-type GaN
Author :
Ping, A.T. ; Schmitz, A.C. ; Khan, M.Asif ; Adesida, I.
Author_Institution :
Dept. of Electr. & Comput. Eng., Illinois Univ., Urbana, IL, USA
fDate :
1/4/1996 12:00:00 AM
Abstract :
The electrical characteristics of Pd Schottky barrier to n-type GaN grown by MOCVD were investigated. The effective barrier height was found to be 0.94 and 1.07 eV from I-V and C-V measurements, respectively. The ideality factor was ~1.04. The effective Richardson constant was determined to be ~3.24 A cm-2 K-2 using the modified Norde plot. These values were also compared to Au Schottky contacts
Keywords :
III-V semiconductors; Schottky barriers; gallium compounds; leakage currents; palladium; semiconductor-metal boundaries; 0.94 eV; 1.07 eV; C-V measurements; I-V measurements; MOCVD; Pd Schottky barrier; Pd-GaN; effective Richardson constant; effective barrier height; electrical characteristics; ideality factor; modified Norde plot; n-type GaN;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19960029
