• DocumentCode
    802097
  • Title

    Characterisation of Pd Schottky barrier on n-type GaN

  • Author

    Ping, A.T. ; Schmitz, A.C. ; Khan, M.Asif ; Adesida, I.

  • Author_Institution
    Dept. of Electr. & Comput. Eng., Illinois Univ., Urbana, IL, USA
  • Volume
    32
  • Issue
    1
  • fYear
    1996
  • fDate
    1/4/1996 12:00:00 AM
  • Firstpage
    68
  • Lastpage
    70
  • Abstract
    The electrical characteristics of Pd Schottky barrier to n-type GaN grown by MOCVD were investigated. The effective barrier height was found to be 0.94 and 1.07 eV from I-V and C-V measurements, respectively. The ideality factor was ~1.04. The effective Richardson constant was determined to be ~3.24 A cm-2 K-2 using the modified Norde plot. These values were also compared to Au Schottky contacts
  • Keywords
    III-V semiconductors; Schottky barriers; gallium compounds; leakage currents; palladium; semiconductor-metal boundaries; 0.94 eV; 1.07 eV; C-V measurements; I-V measurements; MOCVD; Pd Schottky barrier; Pd-GaN; effective Richardson constant; effective barrier height; electrical characteristics; ideality factor; modified Norde plot; n-type GaN;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19960029
  • Filename
    490736
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=802097