Trapping and Thermal Effects Analysis for AlGaN/GaN HEMTs by Means of TCAD Simulations

Author

Miccoli, Carmine ; Martino, Valeria Cinnera ; Reina, Santo ; Rinaudo, S.

Author_Institution

STMicroelectron., Catania, Italy

Volume

34

Issue

9

fYear

2013

fDate

Sept. 2013

Firstpage

1121

Lastpage

1123

Abstract

The aim of this letter is to gain insights into the thermal effects and trapping phenomena of AlGaN/GaN high electron mobility transistors by means of 2-D numerical simulations. Starting from experimental pulsed measurements, we study not only the gate/drain lag due to trap phenomena, but also the thermal behavior of such transistors. Actually, transient tests are useful both to analyze the self-heating effect and to characterize donor surface traps and acceptor bulk traps.

Keywords

III-V semiconductors; aluminium compounds; electron traps; gallium compounds; high electron mobility transistors; semiconductor device measurement; semiconductor device models; technology CAD (electronics); wide band gap semiconductors; 2D numerical simulations; AlGaN-GaN; HEMT; TCAD simulations; acceptor bulk traps; experimental pulsed measurements; gate/drain lag; high electron mobility transistors; self-heating effect; surface traps; thermal behavior; thermal effects analysis; transient tests; trap phenomena; trapping phenomena; Aluminum gallium nitride; Electron traps; Gallium nitride; HEMTs; Logic gates; MODFETs; AlGaN/GaN high electron mobility transistors (HEMTs); drain lag; gate lag; thermal simulation; transient response; traps;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/LED.2013.2274326

Filename

6578092