Coupled-cavity vertical-emitting semiconductor laser for continuous-wave terahertz emission

Author

Chusseau, L. ; Almuneau, G. ; Coldren, L.A. ; Huntington, A. ; Gasquet, D.

Author_Institution

Centre d´´Electronique et de Microoptoelectronique de Montpellier, Univ. Montpellier II, France

Volume

149

Issue

3

fYear

2002

fDate

6/1/2002 12:00:00 AM

Firstpage

88

Lastpage

92

Abstract

A coupled-cavity vertical-emitting semiconductor laser is built. It intrinsically allows the beating of two longitudinal modes owing to a weak coupling between the matched optical cavities. Terahertz electromagnetic waves have to be produced by external photomixing. First, analytical analysis enables design rules to be applied for such a purpose. Secondly, the fabrication and characterisation of a coupled-cavity VCSEL operating at 980 nm is described. The fabricated device shows a low laser threshold and exhibits the coupling between both cavities, although continuous-wave terahertz two-mode beating has not yet been observed

Keywords

distributed Bragg reflector lasers; high-speed optical techniques; laser cavity resonators; laser theory; laser transitions; semiconductor device models; semiconductor lasers; submillimetre wave generation; surface emitting lasers; 980 nm; continuous-wave terahertz emission; coupled-cavity VCSEL; coupled-cavity vertical-emitting semiconductor laser; design rules; external photomixing; fabrication; longitudinal modes; low laser threshold; matched optical cavities; terahertz electromagnetic wave generation; weak coupling;

fLanguage

English

Journal_Title

Optoelectronics, IEE Proceedings -

Publisher

iet

ISSN

1350-2433

Type

jour

DOI

10.1049/ip-opt:20020259

Filename

1025924