DocumentCode
80243
Title
Modeling Resistance Instabilities of Set and Reset States in Phase Change Memory With Ge-Rich GeSbTe
Author
Ciocchini, Nicola ; Palumbo, Elisabetta ; Borghi, M. ; Zuliani, Paola ; Annunziata, Roberto ; Ielmini, Daniele
Author_Institution
Dipt. di Elettron., Inf. e Bioing., Politec. di Milano, Milan, Italy
Volume
61
Issue
6
fYear
2014
fDate
Jun-14
Firstpage
2136
Lastpage
2144
Abstract
To satisfy the growing market demand for embedded nonvolatile memory, alternative solutions to Flash technology are currently under investigation. Among these, phase change memory (PCM) is attracting strong interest due to the low cost of integration with the CMOS front-end and good scalability. Embedded PCM, however, must feature high reliability during both packaging and functional stages. This paper studies reliability of PCM based on Ge-rich GeSbTe, providing evidence for resistance drift and decay in both the reset and set states. Set-state instability is attributed to grain-boundary relaxation and grain growth. A unified model is presented, capable of predicting the reliability of set/reset states at elevated temperature.
Keywords
CMOS memory circuits; antimony alloys; electronics packaging; flash memories; germanium alloys; grain boundaries; grain growth; integrated circuit reliability; phase change memories; random-access storage; tellurium alloys; CMOS front-end; Ge-rich GeSbTe; GeSbTe; PCM; embedded nonvolatile memory; flash technology; functional stages; grain boundary relaxation; grain growth; packaging; phase change memory; reliability; reset states; resistance instability; scalability; set-state instability; Annealing; Crystallization; Electrical resistance measurement; Metals; Phase change materials; Resistance; Temperature measurement; Embedded memory; phase change memory (PCM); reliability modeling; set drift; soldering; soldering.;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/TED.2014.2313889
Filename
6798727
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