DocumentCode
802449
Title
Strained-layer InGaAs-GaAs-AlGaAs buried-heterostructure lasers with nonabsorbing mirrors by selective-area MOCVD
Author
Lammert, R.M. ; Smith, G.M. ; Forbes, D.V. ; Osowski, M.L. ; Coleman, J.J.
Author_Institution
Microelectron. Lab., Illinois Univ., Urbana, IL, USA
Volume
31
Issue
13
fYear
1995
fDate
6/22/1995 12:00:00 AM
Firstpage
1070
Lastpage
1072
Abstract
Design, fabrication, and operation of strained-layer InGaAs-GaAs-AlGaAs buried-heterostructure (BH) lasers with nonabsorbing mirrors fabricated by selective-area epitaxy (SAE) are presented. The SAE-BH lasers with nonabsorbing mirrors operate at powers up to ~325 mW/facet (4 μm wide output aperture), which is a >40% increase over conventional SAE-BH lasers
Keywords
III-V semiconductors; aluminium compounds; chemical vapour deposition; epitaxial growth; gallium arsenide; indium compounds; laser mirrors; optical design techniques; optical fabrication; semiconductor growth; semiconductor lasers; 325 mW; 4 mum; InGaAs-GaAs-AlGaAs; nonabsorbing mirrors; selective-area MOCVD; selective-area epitaxy; strained-layer InGaAs-GaAs-AlGaAs buried-heterostructure lasers; wide output aperture;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19950742
Filename
392665
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