Title :
Compact low-voltage InGaAs/InAlAs multiple quantum well waveguide interferometers
Author :
Zucker, J.E. ; Jones, K.L. ; Chang, T.Y. ; Sauer, N. ; Tell, B. ; Brown-Goebeler, K. ; Wegener, Martin ; Chemla
Author_Institution :
AT&T Bell Lab., Holmdel, NJ, USA
Abstract :
Semiconductor waveguide interferometric intensity modulators are demonstrated with a voltage-length product for 180 degrees optical phase shift Vpi *L=2.2 V mm. The device uses a Mach-Zehnder configuration fabricated by wet chemical etching.
Keywords :
III-V semiconductors; aluminium compounds; electro-optical devices; gallium arsenide; indium compounds; integrated optics; light interferometers; optical modulation; optical waveguide components; semiconductor quantum wells; InGaAs-InAlAs; Mach-Zehnder configuration; compact LV MQW; interferometric intensity modulators; low-voltage; multiple quantum well; rib waveguide; waveguide interferometers; wet chemical etching;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19901310
