• DocumentCode
    802475
  • Title

    Compact low-voltage InGaAs/InAlAs multiple quantum well waveguide interferometers

  • Author

    Zucker, J.E. ; Jones, K.L. ; Chang, T.Y. ; Sauer, N. ; Tell, B. ; Brown-Goebeler, K. ; Wegener, Martin ; Chemla

  • Author_Institution
    AT&T Bell Lab., Holmdel, NJ, USA
  • Volume
    26
  • Issue
    24
  • fYear
    1990
  • Firstpage
    2029
  • Lastpage
    2031
  • Abstract
    Semiconductor waveguide interferometric intensity modulators are demonstrated with a voltage-length product for 180 degrees optical phase shift Vpi *L=2.2 V mm. The device uses a Mach-Zehnder configuration fabricated by wet chemical etching.
  • Keywords
    III-V semiconductors; aluminium compounds; electro-optical devices; gallium arsenide; indium compounds; integrated optics; light interferometers; optical modulation; optical waveguide components; semiconductor quantum wells; InGaAs-InAlAs; Mach-Zehnder configuration; compact LV MQW; interferometric intensity modulators; low-voltage; multiple quantum well; rib waveguide; waveguide interferometers; wet chemical etching;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19901310
  • Filename
    102598