Lasing quantum well optoelectronic switch (OWOES) based on AlGaAs/GaAs/lnGaAs double heterostructure

Author

Yarn, K.F. ; Wang, Y.H. ; Chen, M.S.

Author_Institution

Dept. of Electr. Eng., Nan-Tai Jr. Coll. of Technol., Tainan, Taiwan

Volume

31

Issue

13

fYear

1995

fDate

6/22/1995 12:00:00 AM

Firstpage

1063

Lastpage

1064

Abstract

A lasing quantum well optoelectronic switch (QWOES) based on a forward biased pn junction is demonstrated in an AlGaAs/GaAs/lnGaAs double heterostructure. Excellent electrical switching characteristics with a high voltage control efficiency η, (=V_S/V_H) of 6.8 have been obtained when the device is operated in the dark. Typical OFF-state and ON-state resistances of 120 kΩ and 25 kΩ, respectively, were obtained. The lasing threshold current density, front slope efficiency and external differential quantum efficiency measured in an as-cleaved device are 210 A/cm². 0.4 mW/mA and 31.4%, respectively. The peak emission wavelength is centred at ~974 nm

Keywords

III-V semiconductors; aluminium compounds; gallium arsenide; indium compounds; optical bistability; optical switches; optoelectronic devices; quantum well lasers; semiconductor switches; 120 kohmm; 25 ohmm; 31.4 percent; 974 nm; AlGaAs-GaAs-InGaAs; AlGaAs/GaAs/lnGaAs double heterostructure; OFF-state resistances; ON-state resistances; as-cleaved device; electrical switching characteristics; external differential quantum efficiency; forward biased pn junction; front slope efficiency; high voltage control efficiency; lasing quantum well optoelectronic switch; lasing threshold current density; peak emission wavelength;

fLanguage

English

Journal_Title

Electronics Letters

Publisher

iet

ISSN

0013-5194

Type

jour

DOI

10.1049/el:19950706

Filename

392672