Title :
Lasing quantum well optoelectronic switch (OWOES) based on AlGaAs/GaAs/lnGaAs double heterostructure
Author :
Yarn, K.F. ; Wang, Y.H. ; Chen, M.S.
Author_Institution :
Dept. of Electr. Eng., Nan-Tai Jr. Coll. of Technol., Tainan, Taiwan
fDate :
6/22/1995 12:00:00 AM
Abstract :
A lasing quantum well optoelectronic switch (QWOES) based on a forward biased pn junction is demonstrated in an AlGaAs/GaAs/lnGaAs double heterostructure. Excellent electrical switching characteristics with a high voltage control efficiency η, (=VS/VH ) of 6.8 have been obtained when the device is operated in the dark. Typical OFF-state and ON-state resistances of 120 kΩ and 25 kΩ, respectively, were obtained. The lasing threshold current density, front slope efficiency and external differential quantum efficiency measured in an as-cleaved device are 210 A/cm2. 0.4 mW/mA and 31.4%, respectively. The peak emission wavelength is centred at ~974 nm
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; indium compounds; optical bistability; optical switches; optoelectronic devices; quantum well lasers; semiconductor switches; 120 kohmm; 25 ohmm; 31.4 percent; 974 nm; AlGaAs-GaAs-InGaAs; AlGaAs/GaAs/lnGaAs double heterostructure; OFF-state resistances; ON-state resistances; as-cleaved device; electrical switching characteristics; external differential quantum efficiency; forward biased pn junction; front slope efficiency; high voltage control efficiency; lasing quantum well optoelectronic switch; lasing threshold current density; peak emission wavelength;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19950706
