Title :
Improved free-standing semi-insulating GaAs membranes for sensor applications
Author :
Miao, J. ; Hartnagel, H.L. ; Weiss, B.L. ; Wilson, R.J.
Author_Institution :
Inst. fur Hochfrequenztech., Tech. Hochschule Darmstadt, Germany
fDate :
6/22/1995 12:00:00 AM
Abstract :
Low dose 4 MeV nitrogen implantation into n-GaAs is used to fabricate a compensated surface layer which is etched to produce a 2.5 μm thick semi-insulating GaAs membrane. The versatility of this process is demonstrated by the fabrication of a complex free standing 5.3 mm long 70 μm wide coiled membrane
Keywords :
III-V semiconductors; electric sensing devices; etching; gallium arsenide; ion implantation; membranes; micromachining; 2.5 mum; 4 meV; 5.3 mm; 70 mum; GaAs; compensated surface layer; complex free standing wide coiled membrane fabrication; electric sensing devices; etched; free-standing semi-insulating GaAs membranes; micromachining; n-GaAs; nitrogen implantation; semi-insulating GaAs membrane; sensor applications;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19950748
