DocumentCode
802773
Title
Improved free-standing semi-insulating GaAs membranes for sensor applications
Author
Miao, J. ; Hartnagel, H.L. ; Weiss, B.L. ; Wilson, R.J.
Author_Institution
Inst. fur Hochfrequenztech., Tech. Hochschule Darmstadt, Germany
Volume
31
Issue
13
fYear
1995
fDate
6/22/1995 12:00:00 AM
Firstpage
1047
Lastpage
1049
Abstract
Low dose 4 MeV nitrogen implantation into n-GaAs is used to fabricate a compensated surface layer which is etched to produce a 2.5 μm thick semi-insulating GaAs membrane. The versatility of this process is demonstrated by the fabrication of a complex free standing 5.3 mm long 70 μm wide coiled membrane
Keywords
III-V semiconductors; electric sensing devices; etching; gallium arsenide; ion implantation; membranes; micromachining; 2.5 mum; 4 meV; 5.3 mm; 70 mum; GaAs; compensated surface layer; complex free standing wide coiled membrane fabrication; electric sensing devices; etched; free-standing semi-insulating GaAs membranes; micromachining; n-GaAs; nitrogen implantation; semi-insulating GaAs membrane; sensor applications;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19950748
Filename
392699
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