Title :
Improving corrosion-resistance of polysilicon using boron doping and self-induced galvanic bias
Author :
Stark, Brian H. ; Dokmeci, Mehmet R. ; Najafi, Khalil
Author_Institution :
Center for Wireless Integrated Microsystems, Ann Arbor, MI, USA
Abstract :
In this paper we report upon two novel methods for improving the corrosion resistance of silicon-glass micropackages in high temperature saline soak tests. By using boron doping and/or galvanic biasing, we have shown that the dissolution of polysilicon can be reduced from more that 1 μm /day to less than 90 Å/day. Physical mechanisms for polysilicon corrosion are also presented. Further tests on the packages in-vitro show that the package maintains long-term hermeticity while soaking in high temperature saline.
Keywords :
biomedical electronics; boron; corrosion resistance; dissolving; micromechanical devices; prosthetics; semiconductor device packaging; semiconductor device testing; silicon; MEMS; Si:B; boron doping; corrosion-resistance; galvanic biasing; hermetic biopackaging; high temperature saline soak tests; implantable applications; in-vitro tests; long-term hermeticity; physical corrosion mechanisms; polysilicon; polysilicon dissolution; self-induced galvanic bias; silicon-glass micropackages; Biological materials; Boron; Corrosion; Doping; Electronic packaging thermal management; Electronics packaging; Galvanizing; Glass; Temperature; Wafer bonding;
Journal_Title :
Advanced Packaging, IEEE Transactions on
DOI :
10.1109/TADVP.2003.818058
