Improving corrosion-resistance of polysilicon using boron doping and self-induced galvanic bias

Author

Stark, Brian H. ; Dokmeci, Mehmet R. ; Najafi, Khalil

Author_Institution

Center for Wireless Integrated Microsystems, Ann Arbor, MI, USA

Volume

26

Issue

3

fYear

2003

Firstpage

295

Lastpage

301

Abstract

In this paper we report upon two novel methods for improving the corrosion resistance of silicon-glass micropackages in high temperature saline soak tests. By using boron doping and/or galvanic biasing, we have shown that the dissolution of polysilicon can be reduced from more that 1 μm /day to less than 90 Å/day. Physical mechanisms for polysilicon corrosion are also presented. Further tests on the packages in-vitro show that the package maintains long-term hermeticity while soaking in high temperature saline.

Keywords

biomedical electronics; boron; corrosion resistance; dissolving; micromechanical devices; prosthetics; semiconductor device packaging; semiconductor device testing; silicon; MEMS; Si:B; boron doping; corrosion-resistance; galvanic biasing; hermetic biopackaging; high temperature saline soak tests; implantable applications; in-vitro tests; long-term hermeticity; physical corrosion mechanisms; polysilicon; polysilicon dissolution; self-induced galvanic bias; silicon-glass micropackages; Biological materials; Boron; Corrosion; Doping; Electronic packaging thermal management; Electronics packaging; Galvanizing; Glass; Temperature; Wafer bonding;

fLanguage

English

Journal_Title

Advanced Packaging, IEEE Transactions on

Publisher

ieee

ISSN

1521-3323

Type

jour

DOI

10.1109/TADVP.2003.818058

Filename

1236531